Fabrication method for thin film field effect transistor array s

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 43, 437101, 437229, 357 2, 357 4, 357 237, 350333, H01L 310392, H01L 310376, H01L 21283, H01L 21033

Patent

active

049904604

ABSTRACT:
In a method of fabricating thin film field effect transistor array by forming gate bus lines and drain bus lines in the form of a matrix on a light transmissive insulating film, forming thin film field effect transistors in the vicinity of each crossing point of the gate bus lines and the drain bus lines, and connecting pixel electrodes to each of the thin film field effect transistors, the method of fabricating the thin film field effect transistor array in accordance with the present invention includes the step of forming a gate electrode, the pixel electrode, and the drain bus line consisting of a transparent conductive film and a first metal film, or exclusively of the transparent conductive film, on the light transmissive insulating substrate, the step of forming a laminated film consisting of a gate insulating film, an amorphous silicon layer, and an n-type amorphous silicon layer, covering at least the gate electrodes, and the step of forming the gate bus lines, source electrodes, and drain electrodes consisting of a second metal film.

REFERENCES:
patent: 4115799 (1978-09-01), Luo
patent: 4413883 (1983-11-01), Baraff et al.
patent: 4704783 (1987-11-01), Possin
patent: 4705358 (1987-11-01), Yamazaki et al.
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4818981 (1989-04-01), Oki et al.
patent: 4820024 (1989-04-01), Nishiura
patent: 4864376 (1989-09-01), Aoki et al.
patent: 4894690 (1990-01-01), Okabe
patent: 4918494 (1990-04-01), Koden et al.
patent: 4928161 (1990-05-01), Kobayashi
patent: 4933296 (1990-06-01), Parks et al.
Snell et al., "Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels", Appl. Phys., vol. 24, 1981, pp. 357-362.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication method for thin film field effect transistor array s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication method for thin film field effect transistor array s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for thin film field effect transistor array s will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-10213

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.