Semiconductor memory device using MONOS type nonvolatile memory

Details Semiconductor memory device using MONOS type nonvolatile memory Semiconductor memory device using MONOS type nonvolatile memory

1999-07-13

2000-09-12

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular biasing

36518505, 36518526, 257315, G11C 1604

Patent

active

061186996

ABSTRACT:
That surface portion of a semiconductor substrate which is adjacent to a buried source region formed in the substrate is covered with an offset side wall to suppress expansion of a channel beneath the offset side wall. In addition, buried source regions in the form of offset side walls are formed on the two sides of a drain region having one non-offset side wall to prevent a write or read error in unselected memory cell transistors on both sides of a selected memory transistor either in a data write or in a data read.

REFERENCES:
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5946240 (1999-08-01), Hisamune
patent: 5978271 (1999-11-01), Sato et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device using MONOS type nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device using MONOS type nonvolatile memory , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device using MONOS type nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-101973