Method of manufacturing stacked capacitor type semiconductor mem

Details Method of manufacturing stacked capacitor type semiconductor mem Method of manufacturing stacked capacitor type semiconductor mem

1991-07-10

1993-01-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, H01L 2170

Patent

active

051806835

ABSTRACT:
A semiconductor memory device according to the present invention comprises a memory cell having one transistor and one stacked capacitor. The stacked capacitor is stacked on the surface of a semiconductor substrate. Further, the stacked capacitor has a structure extending on a gate electrode and a word line through an insulating layer. A lower electrode layer of the capacitor had various concave/convex shapes, i.e. step portions and projecting portions formed on the surface thereof. These shapes are made by employing various etching processes. The lower electrode layer has such various concave/convex shapes formed thereon, so that a surface area and capacitance of the capacitor can be increased.

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