Solid-state image sensor and manufacturing process thereof

Details Solid-state image sensor and manufacturing process thereof Solid-state image sensor and manufacturing process thereof

1983-08-25

1986-09-09

Davie, James W.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 24, 357 32, 357 45, 357 47, 358213, 358241, H01L 2714, H01L 2978

Patent

active

046112235

ABSTRACT:
A solid-state image sensor comprises an n-type silicon substrate (11), a p-type silicon layer (12) formed on the substrate (11), a plurality of nMOS transistors (1), a field insulating film (13) for separating the nMOS transistors (1) and a buried insulating film (20) provided between the substrate (11) and the field insulating film (13). The buried insulating film (20) serve to prevent electrons from flowing between the adjacent nMOS transistors (1). Accordingly, occurrence of a color mixture phenomenon, a blooming phenomenon or a smear phenomenon can be suppressed. In addition, when a p-type junction layer (21) is provided on the substrate (11) and a bias power supply (19) is connected between them, and when the voltage is adjusted, the red color sensitivity of a photodiode consisting of an n-type source region (16) in each nMOS transistor (1) can be uniformly and easily adjusted.

REFERENCES:
Hune et al.-A New Isolation Technology for Bipolar Devices by Low Pressure Selective Silicon Epitaxy-Mitsubishi Elec. Corp., Japan.
Endo et al.-Novel Device Isolation Technology with Selective Epitaxy Growth-Nippon Elec. Co., Japan-IEDM 1982.

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