Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-11-22
1985-12-31
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29577C, 29578, 29579, 148 15, 148187, 156653, 156655, 357 231, 357 65, H01L 2122
Patent
active
045611688
ABSTRACT:
An MOS transistor which is suitable for use in the VHF and UHF regions is fabricated in a semiconductor substrate, with the substrate serving as the drain. A body region is formed within the substrate. A layer of insulation is formed over the surface of the device, and a via is formed in the insulation layer to expose those portions of the body region where a groove is to be cut. A groove is then formed in such a manner as to cause the insulation layer to overhang the edge of the groove. A source region is then formed in the exposed portions of the body region beneath the insulation layer. A source electrode and gate electrode are then simultaneously formed, with the overhang of the insulation layer causing the source electrode and the gate electrode to be physically and electrically separated from each other. Well known processing techniques are then used, if desired, to form a second metalization layer to serve as electrical interconnects, and to provide a scratch protection layer.
In accordance with another embodiment of this invention, a lateral MOS transistor is constructed where the drain region is formed in the substrate simultaneously with the formation of the source region.
REFERENCES:
patent: 4187125 (1980-02-01), Feist
patent: 4368573 (1983-01-01), DeBrebisson et al.
patent: 4374454 (1983-02-01), Jochems
patent: 4402761 (1983-09-01), Feist
patent: 4403396 (1983-09-01), Stein
patent: 4413402 (1983-11-01), Erb
patent: 4419811 (1983-12-01), Rice
patent: 4437925 (1984-03-01), Cogan
Pitzer Dorman C.
Rice Edward J.
Caserza Steven F.
Dooher Terrence E.
MacPherson Alan H.
Roy Upendra
Siliconix incorporated
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