Semiconductor device having two-layered passivation film

Details Semiconductor device having two-layered passivation film Semiconductor device having two-layered passivation film

1988-11-09

1991-11-12

Hille, Rolf

357 54, 357 231, 357 2311, 357 2315, H01L 2934

Patent

active

050652222

ABSTRACT:
A passivation film of MOS semiconductor device is composed of a first passivation layer and a second passivation layer formed on the first passivation layer. The first passivation layer comprises silicon dioxide containing phosphorus in 0.5 percent or less and having a film thickness of 1500 .ANG. or more. The second passivation layer comprises silicon oxynitride or silicon nitride.

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Mitsuhashi et al., "Mechanical Stress and Hydrogen Effects on Hot Carrier Injection", IEDM, 1986.
Marrello et al., "Amorphous Dielectric Films of BaTiO.sub.3 and Related Materials", IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976.
Bratter et al., "Dielectric Structure as an Out-Diffusion Barrier", IBM Technical Disclosure Bulletin, vol. No. 6, 11/70.

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