Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1990-03-06
1991-11-12
Jackson, Jr., Jerome
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 236, 357 51, 365185, H01L 2968, H01L 2978
Patent
active
050652010
ABSTRACT:
A semiconductor device includes a DRAM section constituting one MOS transistor and one capacitor, and an EEPROM section constituting one FLOTOX MOS transistor. A control gate electrode of the FLOTOX MOS transistor is connected to a source area of the MOS transistor of the DRAM section, on which is placed a capacitor electrode through an insulation layer, so that the control gate is made a storage node of the DRAM section. Thus, a combination of EEPROM cell and DRAM cell provides a NVRAM cell. When a data change is desired, the NVRAM cell works as DRAM. On the other hand, when data is to be preserved for a longer time, the data is transferred from DRAM section to EEPROM section by the NVRAM cell to be stored in EEPROM section. Since the capacitor of DRAM section has its storage node in common with a control gate of EEPROM section, the number of elements per cell can be reduced, thereby satisfying the requirement for applications of NVRAM cell to high density devices.
REFERENCES:
patent: 4742491 (1988-05-01), Liang et al.
patent: 4835741 (1989-05-01), Baglee
patent: 4866493 (1989-09-01), Arima et al.
patent: 4924278 (1990-05-01), Logie
A Novel NVRAM Cell Technology for High Density Applications, by Y. Yamauchi, K. Tanaka and K. Sakiyama, published in Dec. 1988.
Jackson, Jr. Jerome
Monin, Jr. Donald L.
Sharp Kabushiki Kaisha
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