Semiconductor laser device, a semiconductor wafer

Details Semiconductor laser device, a semiconductor wafer Semiconductor laser device, a semiconductor wafer

1990-04-27

1991-08-20

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 372502, H01S 319

Patent

active

050420445

ABSTRACT:
A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.<.vertline..theta..vertline.<4.degree.; a plurality of striped channels formed in a substrate through a current blocking layer in the direction of the other of the [011] and [011] directions; and at least one dummy side groove formed between the striped channels, having a combined cross-sectional area on the plane perpendicular to the other direction greater than that of each of the striped channels.

REFERENCES:
patent: 4317085 (1982-02-01), Burnham et al.

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