Method of obtaining a ternary monocrystalline layer by means of

Details Method of obtaining a ternary monocrystalline layer by means of Method of obtaining a ternary monocrystalline layer by means of

1989-03-28

1991-11-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437121, 437127, 437133, 156622, H01L 21208

Patent

active

050647806

ABSTRACT:
The invention relates to a method of obtaining by heteroepitaxy a monocrystalline layer of a ternary compound on a monocrystalline substrate of a binary composition, in which a saturated solution (A) of the ternary compound is brought into contact with the substrate (90), the assembly being raised to a first temperature, and is thereafter cooled to a second temperature.
The dynamics of the epitaxial growth is improved in accordance with the invention by placing the substrate (90) on the surface of the solution (A).

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W. W. Ruhle et al., "A (Ga,Al) As Semiconductor Scintillator with Monolithically Integrated Photodiode: A New Detector"; IEEE Transactions on Nuclear Science, vol. NS-30, No. 1, Feb. 1983, pp. 436-439.
J. Lebailly et al., "Comparison of the Aging Behavior of Diffused and Epiaxial GaAlAs Heterojunction Electroluminescent Diodes", IEEE Transactions on Electron Devices, vol. ED-28, No. 4, Apr. 1981, pp. 390-394.
J. Varon et al., "High Brightness GaAlAs Heterojunction RED LED's", IEEE Transactions on Electron Devices, vol. ED-28, No. 4, Apr. 1981, pp. 416-420.

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