Semiconductor device having a vertical power MOSFET fabricated i

Details Semiconductor device having a vertical power MOSFET fabricated i Semiconductor device having a vertical power MOSFET fabricated i

1991-01-22

1991-09-03

James, Andrew J.

357 42, 357 48, 357 52, H01L 2910

Patent

active

050459007

ABSTRACT:
A semiconductor device includes an N-type semiconductor substrate, an N-channel type vertical MOSFET formed in the semiconductor substrate, a source electrode connected to a source region of the vertical MOSFET formed in the upper surface of the semiconductor substrate, a drain electrode of the vertical MOSFET formed on the bottom surface of the semiconductor substrate, a CMOS circuit formed in the upper surface of the semiconductor substrate to control the operation of the vertical MOSFET and a P-type diffused region formed between the vertical MOSFET and the CMOS circuit. The drain electrode is to be connected to a first power line, the source electrode being to be connected to a load connected to a second power line.

REFERENCES:
patent: 4862233 (1989-08-01), Matsushita et al.

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