Quaternary II-VI materials for photonics

Details Quaternary II-VI materials for photonics Quaternary II-VI materials for photonics

1990-03-14

1991-09-03

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 30, 372 43, 372 45, 372 50, H01L 28161, H01L 29205, H01L 3300, H01L 2714

Patent

active

050458973

ABSTRACT:
A photonic device includes a substrate and a region comprised of a quaternary Group II-VI material supported by the substrate. Examples of quaternary Group II-IV alloys include Hg, Zn, S and Se; Hg, Zn, Se and Te; Zn, S, Se and Te; Zn, Mn, S and Se; and Hg, Cd, Zn and S. By example, the quaternary material HgZnSSe, which is lattice-matched to ZnSe or GaAs, and the quaternary material HgZnSeTe, which is lattice-matched to ZnTe or GaSb, are employed in the construction of lasers, LEDs and detectors suitable for use over a range of wavelengths. The energy bandgap of the HgZnSSe alloy may be varied to achieve emission over the entire visible spectrum while the HgZnSeTe alloy emits within the spectrum from green to far infrared.

REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 4195305 (1980-03-01), Moon
patent: 4296425 (1981-10-01), Nishizawa
patent: 4422888 (1983-12-01), Stutius
patent: 4753684 (1988-06-01), Ondris et al.
"New Technology for Epitaxial II-VII Compound Semiconductor Devices", Jones et al., IEEE Trans. on Electron Devices, vol. ED-34, #4, Apr. 1987, pp. 937-938.
"Growth of Cad Zn Te On Si by Low-Pressure Chemical Vapor Doposition", Jitendra et al., Appl. Phys. Lett., vol. 51, #12, Sep. 12, 1987, pp. 928-930.
"Zn Se-Z.sub.n S.sub.x Se.sub.l-x and Zn Se-Zn.sub.1-x Mn.sub.x Se Metal-Insulator-Semiconductor Hetero Juncture Lasers", Jan. J. Crystal Growth, vol. 86, 1988, pp. 929-934.
"Infrared Diodes Fabricated with Hg Cd Te Grown by Molecular Beam Epitaxy on GaAs Substrates", Arias et al., Appl. Phys. Lett., vol. 54 #11, Mar. 13, 89, pp. 1025-1027.
"Incorporation and Compensation of Impurities in II-VI Semiconductors", by Y. Marfaing. Laboratoire de Physique des Solides de Bellevue CNRS, F-92195 Meudon Cedex, France, Adv. Research Workship, 9/88.
"Metalorganic Chemical Vapor Deposition Growth of Cd.sub.l-y Zn.sub.y Te Epitaxial Layers on GaAs and GaAs/Si Substrate, J. Vac. Technol", A 7 (2), Mar./Apr. 1989.
"Research on Short-Wavelength Visible Laser Diodes" by T. Yao et al., (1984), (Translation not Available).
"(Zn,Hg)S and (Zn,Cd,Hg)S Electroluminescent Phosphors" by A. Wachtel, Jrnl. of the Electrochemical Society, Aug. 1960, vol. 107, No. 8.

Affiliated with

Also associated with

Rating

Quaternary II-VI materials for photonics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quaternary II-VI materials for photonics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quaternary II-VI materials for photonics will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1012500