Compound semiconductor light emitting device

Details Compound semiconductor light emitting device Compound semiconductor light emitting device

1989-06-22

1991-09-03

Hille, Rolf

357 4, 357 16, 357 61, 357 58, H01L 3300

Patent

active

050458949

ABSTRACT:
Strained-layer superlattices are formed on a substrate by alternately and epitaxially laminating a plurality of first compound semiconductor layers each of which is composed of a II-Vi compound semiconductor and second compound semiconductor layers each of which is composed of a II-VI or III-V compound semiconductor having a smaller lattice constant than the compound semiconductor of the first compound semiconductor layer. A first conduction type impurity diffusion region is formed in at least each layer surface of the first compound semiconductor layers, and a second conduction type region is so formed as to be adjacent to the first conduction type impurity diffusion region directly or through an undoped region. Electrodes are provided on the end side surfaces of the respective regions. The thus-obtained compound semiconductor light emitting device efficiently emits light in the visible region including green to blue wavelength region.

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