Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1990-05-14

1991-08-20

Hille, Rolf

357 55, 357 42, H01L 2968, H01L 2906, H01L 2702

Patent

active

050418874

ABSTRACT:
In one-transistor.one-capacitor type dynamic memory cell, cell capacitor with a reduced junction leakage current comprises a MOS capacitor which is provided between a semiconductor substrate and a charge storage electrode disposed at a side wall of a trench through a first insulating film, and a stacked capacitor which is provided between the charge storage electrode and a capacitor plate electrode formed on a second insulating film covering the entire surface of the charge storage electrode. The equivalent silicon dioxide thickness of the first insulating film is thicker than that of the second insulating film, and the storage capacitance of the cell capacitor is rendered by a sum of the capacitance of the MOS capacitor and the capacitance of the stacked capacitor because these capacitors are electrically connected in parallel with each other.

REFERENCES:
patent: 4688063 (1987-08-01), Lu et al.
patent: 4794434 (1988-12-01), Pelley, III
patent: 4921816 (1990-05-01), Ino
patent: 4922313 (1990-05-01), Tsuchiya

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