Thin film semiconductor device with particular grain size

Details Thin film semiconductor device with particular grain size Thin film semiconductor device with particular grain size

1992-03-26

1993-02-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 64, 257 59, 257443, 257448, H01L 2714

Patent

active

051842009

ABSTRACT:
A semiconductor device comprises, at least, an insulative layer; a semiconductor layer provided in contact with the insulative layer; first and second electrodes provided in contact with the semiconductor layer; and a third electrode provided through the insulative layer. The semiconductor layer has a crystallite layer whose average grain diameter lies within a range from 50 to 350 .ANG. and an amorphous layer.

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patent: 4845355 (1989-07-01), Nakagawa et al.
Seager et al., "Passivation of Grain Boundaries in Polycrystalline Silicon," Appl. Phys. Lett. 34(5), Mar. 1, 1979, pp. 337-340.
"Amorphous silicon phototransistors" by Y. Kaneko et al.; Applied Physics Letters: vol. 56, No. 7, Feb. 12, 1990, pp. 650-652, New York, USA.
"Enhancement of open cirucit voltage in high efficiency amorphous silicon alloy solar cells" by S. Guha et al.; Applied Physics Letter, vol. 49, No. 4, Jul. 28, 1986, pp. 218-219, New York, U.S.A.
"Preparation of muc--Si:H/a--Si:H multilayers and their optoelectronic properties" by M. Nakata et al., Japanese Journal of Applies Physics, vol. 29, No. 6, Jun. 1990, pp. 1027-1032, Tokyo, Japan.
"Preparation of a--Si:H films by alternately repeating deposition and hydrogen plasma treatment" by K. Miyachi et al., Technical Digest of the 5th International photovoltaic Science and Engineering Conference, Nov. 26-30, 1990, pp. 63-66, Kyoto, Japan.

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