Substrate potential generating circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

3072964, 3072966, 307303, H03K 301, H03K 500, H03K 326

Patent

active

050417398

ABSTRACT:
A substrate potential generating circuit of the present invention includes a first charge-pump circuit which produces a higher-potential voltage whose polarity is the same as that of and whose potential is higher than that of the power supply voltage and a second charge-pump circuit to which is supplied as a power source voltage the higher-potential voltage produced by the first charge-pump circuit and which generates a predetermined substrate potential to be supplied to a substrate of a semiconductor integrated circuit. The polarity of the substrate potential is opposite to that of the higher-potential voltage. The circuit of the present invention has enough capability of stably supplying the necessary substrate potential to the substrate without increasing the size of any transistors or capacitor constituting the second charge-pump circuit. In order to enhance the reliability of the circuit, the generating circuit may further comprise a high-potential control circuit which controls a maximum potential of the higher-potential voltage produced by the first charge-pump circuit and then supplied to the second charge-pump circuit as a power source voltage therefor.

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patent: 4797001 (1989-01-01), Matsumoto et al.
patent: 4843256 (1989-06-01), Scade et al.
patent: 4961007 (1990-10-01), Kumanoya et al.

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