Special geometry Schottky diode

Details Special geometry Schottky diode Special geometry Schottky diode

1991-06-12

1993-02-02

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257486, 257773, H01L 2948, H01L 2348

Patent

active

051841983

ABSTRACT:
Schottky barrier diode comprises a Schottky contact layer having an increased periphery to area ratio. In the illustrated embodiment, the Schottky contact layer comprises a plurality of individual contact regions interconnected by an overlying metallization layer.

REFERENCES:
patent: 4901120 (1990-02-01), Weaver et al.
patent: 4982260 (1991-01-01), Chang et al.
patent: 5027166 (1991-06-01), Ohtsuka et al.
R. U. Martinelli et al., "The Effects of Storage Time Variations on the Forward Resistance of Silicon P.sup.+ --n--n.sup.+ Diodes at Microwave Frequencies", IEEE Trans. on Elec. Dev., vol. ED-27, No. 9, pp. 1728-1732, 1980.
Robert H. Kingston, "Switching Time in Junction Diodes and Junction Transistors", Proceedings of the I-R-E, pp. 829-834; 1954.
Sze, "Minority Carrier Injection Ratio", Solid State Electronics 8, pp. 390-393; 1965.

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