PdIn ohmic contact to GaAs

Details PdIn ohmic contact to GaAs PdIn ohmic contact to GaAs

1990-05-10

1991-09-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 65, 357 71, H01L 21283

Patent

active

050455028

ABSTRACT:
An ohmic contact to a semiconductor such as GaAs and its method of making in which a thin layer of Pd is overlaid preferably with a layer of Group-IV element such as Ge followed by another layer of Pd. This structure is then overlaid with a layer of Pd and In. The atomic ratio of the Pd and In in the entire structure lies between 0.9 and 1.5. This structure is then annealed at a temperature between 350.degree. C. and 675.degree. C. There results a very thin crystalline layer of Ge-doped InGaAs adjacent the GaAs and an overlying PdIn alloy layer providing a contact resistance in the range of 0.1-1 .OMEGA.-mm.

REFERENCES:
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 4796082 (1989-01-01), Murakami et al.
patent: 4847675 (1989-07-01), Eng
E. D. Marshall et al, "Nonalloyed Ohmic Contacts to n-GaAs by Solid-Phase Epitaxy of Ge", Journal of Applied Physics, 1987, vol. 62, pp. 942-947.
L. C. Wang et al, "An Investigation of a Nonspiking Ohmic Contact to n-GaAs Using the Si/Pd System", Journal of Materials Research, 1988, vol. 3, pp. 922-930.
E. D. Marshall et al, "Ohmic Contact Formation Mechanism in the Ge/Pd
-GaAs System", Material Research Society Symposium Proceedings, 1989, vol. 148, pp. 163-168.
S. L. Wright et al, "In situ Contacts to GaAs Based on InAs", Applied Physics Letters, 1986, vol. 49, pp. 1545-1547.
D. C. Marvin et al, "In/Pt Ohmic Contacts to GaAs", Journal of Applied Physics, 1985, vol. 58, pp. 2659-2661.
J. Ding et al, "In/GaAs Reaction: Effect of an Intervening Oxide Layer", Applied Physics Letters, 1986, vol. 49, pp. 818-820.
T. Sands et al, "Initial Stages of the Pd-GaAs Reaction: Formation and Decomposition of Ternary Phases", Thin Solid Films, 1986, vol. 136, pp. 105-122.
L. H. Allen et al, "Ohmic Contacts to n-GaAs Using In/Pd Metallization", Applied Physics Letters, 1987, vol. 51, pp. 326-327.
T. Sands et al., "Solid-Phase Regrowth of Compound Semiconductors by Reaction-Driven Decomposition of Intermediate Phases", Journal of Materials Research, 1988, vol. 3, pp. 914-921.
M. Murakami et al, "Thermally Stable, Low-Resistance NiInW Ohmic Contacts to n-Type GaAs", Applied Physics Letters, 1987, vol. 51, pp. 664-666.

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