Method of making a semiconductor laser

Details Method of making a semiconductor laser Method of making a semiconductor laser

1990-07-25

1991-09-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG95, 437133, H01L 2120

Patent

active

050455001

ABSTRACT:
A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser lifetime are avoided. An increase in COD level of about 20 percent is achieved in the invention.

REFERENCES:
patent: 4758535 (1988-07-01), Sakakibara et al.
patent: 4849372 (1980-07-01), Takemoto
Nakatsuka et al, "A New Self-Aligned . . . by MOCVD", Japanese Journal of Applied Physics, vol. 25, No. 6, Jun. 1986, pp. 498-500.
Yang et al, "High Power Operation . . . (ICSP) Lasers", Electronics Letters, vol. 21, No. 17, Aug. 15, 1986, pp. 751-752.
Mawst et al, "Complementary Self-Aligned . . . Vapour Deposition", Electronics Letters, vol. 21, No. 20, Sep. 26, 1985, pp. 903-905.

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