Method of making a schottky electrode

Details Method of making a schottky electrode Method of making a schottky electrode

1989-10-25

1991-09-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437177, 437176, 437197, 437196, 437912, 437911, 437957, 148DIG139, 148DIg140, 148DIG88, H01L 2144

Patent

active

050454978

ABSTRACT:
A semiconductor device includes a semiconductor body and a metal contact forming a Schottky barrier with said body, the metal contact including a layer of nickel disposed on the semiconductor body, an aluminum layer disposed on the nickel layer, and a nickel aluminum alloy disposed at the interface of the layers. The alloy is formed by heating the metal layers.

REFERENCES:
patent: 3231421 (1966-07-01), Schmidt
patent: 3935586 (1976-01-01), Landheer et al.
patent: 4154874 (1979-05-01), Howard et al.
patent: 4310568 (1982-01-01), Howard et al.
"Initial Phase Formation and Dissociation in the Thin-Film Ni/Al System", E. G. Colgan et al., J. Appl. Phys. 58(11), 1985, pp. 4125-4129.
"Fabrication of Intermetallic Diffusion Barriers for Electromigration in Narrow-Line Stripes", Howard et al., IBM Tech. Disclosure Bulletin, 2/78, pp. 3477-3479.
"Correlation of Schottky-Barrier Height and Microstructure in the Epi-Ni Silicide on Si(111)", Liehr et al., Phys. Review Letters, 5/85, pp. 2139-2142.

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