Semiconductor light-emitting devices

Details Semiconductor light-emitting devices Semiconductor light-emitting devices

1992-06-04

1993-10-05

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 94, 257 96, 257103, 257 97, 372 43, 372 45, H01L 3300

Patent

active

052508145

ABSTRACT:
A semiconductor light-emitting device, such as LEDs AND laser diodes having emission wavelengths in a range which includes the blue to ultra-violet region of the spectrum are disclosed. The LED comprises a substrate and an p-n junction structure formed on the substrate, the p-n junction structure having first and second semiconductor layers, each consisting essentially of (Cu.sub.a Ag.sub.1-a)(Al.sub.b Ga.sub.1-b)(Se.sub.o S.sub.1-o).sub.2, wherein 0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, and 0.ltoreq.c.ltoreq.1, the first semiconductor layer being doped with N, P, or As, the second semiconductor layer being doped with Zn, Cd, Cl, Br, or I. A semiconductor laser comprises a substrate and a double-hetero structure formed on the substrate, the double-hetero structure having: a p-type semiconductor layer, an active layer formed on the p-type semiconductor layer, and n-type semiconductor layer formed on the active layer, each of the p-type semiconductor layer and n-type semiconductor layer consisting essentially of (Cu.sub.a Ag.sub.1-a)(Al.sub.b Ga.sub.1-b)(Se.sub.o S.sub.1-o).sub.2, wherein 0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, and 0.ltoreq.c.ltoreq.1, the active layer consisting essentially of (Zn.sub.d Cd.sub.1-d)(Se.sub.m S.sub.n Te.sub.1-m-n), wherein 0.ltoreq.d.ltoreq.1, 0.ltoreq.m.ltoreq.1, 0.ltoreq.n.ltoreq.1, and m+n.ltoreq.1.

REFERENCES:
patent: 5008891 (1991-04-01), Morita
patent: 5091758 (1992-02-01), Morita
"Preparation and Properties of Green-Light-Emitting CdS-CuGaS.sub.2 Heterodiodes" by Sigurd Wagner; Journal of Applied Physics, vol. 45, No. 1, Jan. 1974; pp. 246-251.
"Green Electroluminescence from ZnS-CuGaS.sub.2 Heterojunction Diode in DC Operation", Satoshi Kobayashi et al.; Japanese Journal of Applied Physics; vol. 30, No. 10A; Oct., 1991, pp. L1747-L1749.

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