Method of making semiconductor device including high resistivity

Details Method of making semiconductor device including high resistivity Method of making semiconductor device including high resistivity

1995-02-06

1997-10-21

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437107, 437129, 437132, H01L 2120

Patent

active

056796030

ABSTRACT:
A high resistance compound semiconductor layer included in a semiconductor device including a plurality of compound semiconductor layers having different compositions includes a compound semiconductor that is vapor phase grown employing an organic metal compound including In, an organic metal compound including Al, and a hydrogenated compound or an organic metal compound including As. The high resistance compound semiconductor layer includes p type impurities having a concentration that positions the Fermi level of the compound semiconductor approximately at the center of the band gap of the compound semiconductor. Therefore, it is possible to produce a high resistance AlInAs layer that has less impurities that are diffused into an adjacent compound semiconductor layer.

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Naritsuka et al., "Electrical Properties And Deep Levels Of InAsAs Layers Grown By Metalorganic Chemical Vapor Deposition", Journal of Crystal Growth, vol. 131, 1993, pp. 186-192.

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