Method for fabricating P-wells and N-wells having optimized fiel

Details Method for fabricating P-wells and N-wells having optimized fiel Method for fabricating P-wells and N-wells having optimized fiel

1995-10-05

1997-10-21

Niebling, John

Fishing, trapping, and vermin destroying

437 45, 437 56, 437 57, 437 58, H01L 21265

Patent

active

056795882

ABSTRACT:
A method forms, in a CMOS semiconductor substrate, P- and N-wells having independently optimized field regions and active regions. In one embodiment, P- and N-wells are formed by (i) creating in successive steps the field regions of the P- and N-wells; (ii) creating an oxide layer over the field regions, (iii) creating in successive steps the active regions. The method achieves the P- and N-wells without increasing the number of photoresist masking steps. In addition, optical alignment targets (OATs) are optionally formed simultaneously with these P- and N-wells without increasing the total number of process steps.

REFERENCES:
patent: 4412375 (1983-11-01), Mathews
patent: 5141882 (1992-08-01), Komori et al.
patent: 5256563 (1993-10-01), Moslehi et al.
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5427964 (1995-06-01), Kaneshiro et al.

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