Method of providing silicon dioxide layer on a substrate by mean

Details Method of providing silicon dioxide layer on a substrate by mean Method of providing silicon dioxide layer on a substrate by mean

1991-08-02

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 427 96, 427585, H01L 2100, H01L 2102, H01L 2120, H01L 21205

Patent

active

052504735

ABSTRACT:
A LPCVD-process for SiO.sub.2 -layers at a deposition temperature between 420.degree. C. and 500.degree. C., using a silane compound in which only one H and one Cl-atom is bonded to the Si-atom yields a very satisfactory uniformity of the layer thickness. An example of such a silane compound is dimethyl monochlorosilane.

REFERENCES:
patent: 4810673 (1989-03-01), Freeman
Smits, Method of providing a silicon dioxide layer on a substrate by means of chemical reaction from the vapour phase at a low pressure (LPCVD), CA116(22):225393u, 1992.
Sze, VLSI Technology, McGraw-Hill, 1988, p. 249.

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