Method of forming an integrated circuit capacitor dielectric and

Details Method of forming an integrated circuit capacitor dielectric and Method of forming an integrated circuit capacitor dielectric and

1991-09-13

1993-10-05

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 52, 437 60, 437241, H01L 2170, H01L 21265

Patent

active

052504565

ABSTRACT:
A method of forming a capacitor in an integrated circuit, such as a dynamic random access memory (DRAM), and a capacitor and DRAM cell formed by such a method, is disclosed. A first capacitor plate is formed of silicon, for example polysilicon, followed by oxidation thereof to form a thin capacitor oxide layer thereover; alternatively, the thin capacitor oxide layer may be deposited. Nitrogen ions are then implanted through the oxide and into the silicon. A high temperature anneal is then performed in a nitrogen atmosphere, which causes the implanted nitrogen to accumulate near the interface between the silicon first plate and the oxide layer, forming a nitride-like region thereat. An optional sealing thermal reaction (oxidation or nitridation) may then be performed, to reduce the effects of pinholes or other defects in the composite film. The second plate may then be formed of polysilicon, metal, or a metal silicide, completing the capacitor.

REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 4623912 (1986-11-01), Chang et al.
patent: 4774197 (1988-09-01), Haddad et al.
patent: 4806498 (1989-02-01), Fujii
patent: 4818711 (1989-04-01), Choksi et al.
patent: 4882649 (1989-11-01), Chen et al.
patent: 4897368 (1990-01-01), Kobushi et al.
Josquin, et al., "The Oxidation Inhibition in Nitrogen-Implanted Silicon", J. Electrochem. Soc.: Solid-State Science and Technology (Aug. 1962) pp. 1803-1810.

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