Method for forming thickened source/drain contact regions for fi

Details Method for forming thickened source/drain contact regions for fi Method for forming thickened source/drain contact regions for fi

1992-12-10

1993-10-05

Quach, T. N.

Fishing, trapping, and vermin destroying

437 46, 437 99, 437101, 437193, 148DIG1, 156633, 156653, 156657, H01L 21336, H01L 213205

Patent

active

052504549

ABSTRACT:
A method for the self-aligned thickening of the source and drain contact regions (24,26) in which an amorphous silicon layer (40) is deposited over the gate (16), source contact region (24), the drain contact region (26), and side wall spacer (20) of an FET being fabricated on a substrate silicon layer (14). The amorphous layer (40) is heated to induce epitaxial growth in the source contact region (24) and drain contact region (26). The induced epitaxial growth of the amorphous silicon thickens these contact regions allowing for the subsequent formation of a highly conductive contact silicide for the cases where the available volume of the silicon in the contact areas is limited. The uncrystallized silicon is removed from the side wall spacer (20) of the gate and other insulating areas by a selective wet etch.

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