Process for the production of thin film transistors

Details Process for the production of thin film transistors Process for the production of thin film transistors

1992-04-10

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437913, 148DIG1, 148DIG150, 148DIG100, H01L 21265

Patent

active

052504514

ABSTRACT:
Process for the local passivation of a substrate by a hydrogenated amorphous carbon layer and process for producing thin film transistors on said passivated substrate. The local passivation process consists of producing photosensitive resin patterns (3) on the substrate (1), subjecting the structure obtained to a radio-frequency plasma essentially constituted by a hydrocarbon for thus depositing a hydrogenated amorphous carbon layer (6) on the structure and dissolving the resin patterns (3) in order to eliminate the amorphous carbon deposited on the resin, the amorphous carbon deposited on the substrate constituting the said passivation.

REFERENCES:
patent: 4517733 (1985-05-01), Hamano
patent: 4808833 (1989-02-01), Saito
patent: 5079178 (1992-01-01), Chouan et al.
Journal of Applied Physics, W. J. Vargue, et al. pp. 3835-3841; Apr. 1990; "Electrical and chemical characteristics of a-C:H prepared by rf glow discharge".
Thin Solid Films, Z Has, et al., (1986) No. 2, pp. 161-166, "Electrical properties of thin carbon films obtained by R.F. methane decomposition on an R.F. powered negatively self biased electrode".

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