Semiconductor laser

Details Semiconductor laser Semiconductor laser

1998-09-18

2000-12-26

Arroyo, Teresa M.

Coherent light generators

Particular active media

Semiconductor

H01S 500

Patent

active

061670715

ABSTRACT:
An end face emitting type semiconductor laser has a first semiconductor layer including a first clad layer, an active layer and a second semiconductor layer including a second clad layer superposed one on another in this order on a substrate. A first electrode is formed on the substrate or the first semiconductor layer and a second electrode is formed on the upper surface of the second semiconductor layer. The second semiconductor layer is transparent to light of a wavelength at which the semiconductor laser oscillates, and a pattern of concavity and convexity is formed on the upper surface of the second semiconductor layer in a region corresponding to an oscillating part of the semiconductor laser.

REFERENCES:
patent: 5255278 (1993-10-01), Yamanaka
patent: 5448584 (1995-09-01), Ueno
patent: 5568504 (1996-10-01), Kock et al.
patent: 5727013 (1998-03-01), Botez et al.
"The Blue Laser Diode: GaN Based Light Emitters and Lasers", Nakamura et al., Nichia Chemical Industries Ltd., Springer-Verlag Berlin Heidelberg 1997, Chap. 13 & 14. (No Month Available).

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1003173