Optical semiconductor device and method of fabricating the same

Details Optical semiconductor device and method of fabricating the same Optical semiconductor device and method of fabricating the same

1997-12-05

2000-12-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 14, 372 46, 385131, H01S 3085

Patent

active

061670707

ABSTRACT:
There is provided an optical semiconductor device including an optical waveguide structure having a quantum well layer and an optical confinement layer as a core layer, wherein the core layer has a thickness varying in a lengthwise direction of the optical waveguide to thereby have a function of spot-size conversion, and the quantum well layer is designed to have a band-gap energy which is constant within .+-.30 meV in the direction. The above-mentioned optical semiconductor device makes it possible to an optical gain to laser oscillation wavelength over all ranges of a resonator, and hence makes it no longer necessary to form a region only for spot-size conversion (SSC). This ensures that a device length can be as small as that of a conventional laser diode. In addition, lower threshold value characteristic and high temperature operation performance could be achieved, and a yield in devices per a wafer can be significantly enhanced.

REFERENCES:
patent: 5889294 (1999-03-01), Kashima et al.
patent: 5987046 (1999-11-01), Kobayashi et al.
T. Yamamoto et al., "High temperature operation of 1.3 .mu.m narrow beam divergence tapered-thickness waveguide BH MQW lasers", p. 2178, Electronics Letters, GB, IEE Stevenage, vol. 31, No. 25, Dec. 7, 1995.
Electronics Letters, vol. 31, No. 13, Jun. 22, 1995, pp. 1069-1070.
Electronics Letters, vol. 31, No. 25, Dec. 7, 1995, pp. 2178-2179.
Electronics Letters, vol. 31, No. 24, Nov. 23, 1995, pp. 2102-2104.
Extended Abstracts (The 56th Autumn Meeting 1995), 28a-ZF-6, No. 1, p. 293, Aug.
Extended Abstracts (The 39th Spring Meeting 1992), 30a-SF-29, No. 3, p. 976, Mar.
Journal of Electronic Materials, vol. 25, No. 3, 1996, pp. 401-406.
by Tatsuya Sasaki et al., "Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy", Journal of Crystal Growth, vol. 145, 1994, pp. 846-851. (No Month).

Affiliated with

Also associated with

Rating

Optical semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1003168