Intracavity frequency-converted optically-pumped semiconductor l

Coherent light generators – Particular beam control device – Nonlinear device

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372 45, 372105, 372 20, 372 93, H01S 310

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061670685

ABSTRACT:
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a monolithic surface-emitting semiconductor layer structure including a Bragg mirror portion and a gain portion. An external mirror and the Bragg-mirror portion define a laser resonant-cavity including the gain-portion of the semiconductor layer structure. A birefringent filter is located in the resonant-cavity for selecting a frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the resonant-cavity between the birefringent filter and the external mirror and arranged to double the selected frequency of laser-radiation.

REFERENCES:
patent: 5050179 (1991-09-01), Mooradian
patent: 5131002 (1992-07-01), Mooradian
patent: 5289485 (1994-02-01), Mooradian
patent: 5331002 (1994-07-01), Mooradian
patent: 5384797 (1995-01-01), Welch et al.
patent: 5436920 (1995-07-01), Minemoto et al.
patent: 5461637 (1995-10-01), Mooradian et al.
patent: 5627853 (1997-05-01), Mooradian et al.
Kuznetsov, M. et al., "High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers With Circular TEM.sub.00 Beams," IEEE, Inc., New York, Vp;/ 9, No. 8, p. 1063-1065, XP000699799, Aug., 1997.
PCT International Search Report, mailed Feb. 25, 2000, for International Appln. No. PCT/US 99/24303, filed Oct. 18, 1999, 7 pages in length.
J.V. Sandusky & S.R.J. Brueck, "A CW External-Cavity Surface-Emitting Laser," IEEE Photonics Technology Letters, vol. 8, No. 3, Mar. 1996, pp. 313-315.
M. Kuznetsov, F. Hakimi, R. Sprague & A. Mooradian, "High-Power (>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM.sub.00 Beams," IEEE Photonics Technology Letters, vol. 9, No. 8, Aug. 1997, pp. 1063-1065.
A. Rosiewicz, P. Crosby & J-M. Pelaprat, "Optical pumping improves VCSEL performance," Laser Focus World, Jun. 1997, pp. 133-136.
Wang-hua Xiang, et al., "Femtosecond external-cavity surface-emitting InGaAs/InP multiple-quantum-well laser," Optics Letters,vol. 16, No. 18, Sep. 15, 1991, pp. 1394-1396.
Copy of Jan. 1, 2000, Notification of Transmittal of the International Search Report or Declaration in PCT/US99/22960, 7 pages in length.

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