Patent
1986-07-07
1988-03-01
James, Andrew J.
357 22, 357 49, 357 71, H01L 2970, H01L 2980, H01L 2706
Patent
active
047290080
ABSTRACT:
A high voltage bipolar and JFET have their gate and base connected and source and collector connected and the appropriate geometry for the bipolar to operate to its BV.sub.CBO limit. The collector and channel regions have the same depth and impurity concentration, the base and top gate regions have the same depth and impurity concentration and the emitter and source and drain regions have the same depth and impurity concentration.
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Harris Corporation
Jackson, Jr. Jerome
James Andrew J.
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