Plasma chemical vapor deposition apparatus

Details Plasma chemical vapor deposition apparatus Plasma chemical vapor deposition apparatus

1989-11-03

1991-09-03

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118719, C23C 1650

Patent

active

050443119

ABSTRACT:
A plasma chemical vapor deposition apparatus comprises a reaction chamber, electrodes provided in the reaction chamber and a side wall constituting part of the reaction chamber and having a wafer access opening, at least the side wall having its surface portion covered with an insulating member. The insulating member prevents abnormal discharge between the electrodes and side wall.

REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky
patent: 4491496 (1985-01-01), Laporte
patent: 4576830 (1986-03-01), Kiss
patent: 4616597 (1986-10-01), Kaganowicz

Affiliated with

Also associated with

Rating

Plasma chemical vapor deposition apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma chemical vapor deposition apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma chemical vapor deposition apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1000808