4. Coating apparatus
  5. Gas or vapor deposition
  6. Work support

Tadaaki Honma

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Apparatus for thin film growth

Coating apparatus – Gas or vapor deposition – Work support
Reexamination Certificate

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Silicon epitaxial wafer and production method therefor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2561212

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