4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Johannes Völkl

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Device and method for producing at least one SiC single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate

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Light-emitting diode and method for the production thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate

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Method for growing an &agr;-SiC bulk single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Reexamination Certificate

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Method for growing SiC single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Optical semiconductor device comprising a multiple quantum...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Reexamination Certificate

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