4. Compositions
  5. Barrier layer device compositions
  6. Group iii element containing binary compound; e.g., ga, as

Chun-yuan Lee

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Material compositions for transient voltage suppressors

Compositions – Barrier layer device compositions – Group iii element containing binary compound; e.g. – ga – as
Reexamination Certificate

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Transient voltage suppressor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2672951

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