4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. Including change in a growth-influencing parameter

Christian K. Kisielowski

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Group III-nitride thin films grown using MBE and bismuth

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Reexamination Certificate

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Group III-nitride thin films grown using MBE and bismuth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent

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Profile ID: LFUS-PAI-P-1813949

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