4. Coating apparatus
  5. Gas or vapor deposition
  6. With treating means

Calvin Carter, Jr.

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Susceptor designs for silicon carbide thin films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Susceptor designs for silicon carbide thin films

Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate

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