4. Semiconductor device manufacturing: process
  5. Introduction of conductivity modifying dopant into...
  6. Ion implantation of dopant into semiconductor region

Andrey E. Nikolaev

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Apparatus for epitaxially growing semiconductor device...

Coating apparatus – Gas or vapor deposition – Multizone chamber
Reexamination Certificate

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Method of epitaxially growing device structures with sharp...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate

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Method of epitaxially growing device structures with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method of epitaxially growing submicron group III nitride...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Process for producing III-V nitride pn junctions and p-i-n...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2095730

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