Nonvolatile memory element composed of combined superconductor r

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Information processing


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505831, 505833, 505841, 505191, 365160, 365161, 257421, 257427, G11C 1144, G11C 11063, H01L 2718




A novel nonvolatile memory element or cell comprising a memory means consisting of at least one superconducting ring (21, 22) and a detector means consisting of a MOSFET. The superconducting ring and the MOSFET are arranged in such a manner that a magnetic flux created by the superconducting ring (21, 22) passes through a channel zone of the MOSFET. Information is held in the superconducting ring in a form of permanent current and is detected electrically as variation in the conductivity of the channel zone of the MOSFET.

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