Etching of nanoscale structures

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250423F, H01J 3730

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active

050216724

ABSTRACT:
A process for etching with a scanning tunneling microscope using a two-dimensional metal chalcogenide as the substrate, is disclosed.

REFERENCES:
patent: 4343993 (1982-08-01), Binnig et al.
patent: 4550257 (1985-10-01), Binnig et al.
patent: 4785185 (1988-11-01), Wells
patent: 4829507 (1989-05-01), Kazan et al.
patent: 4894537 (1990-01-01), Blackford et al.
patent: 4896044 (1990-01-01), Li et al.
Wickramasinghe, H. K., Scientific American, Oct. (1989), pp. 98-105.
Rabe, J. P., Angew. Chem. Int. Ed. Engl. 28 (1989), No. 1, pp. 117-122.
Hansma et al., Science, 242, Oct. 14, 1988, pp. 209-216.
McCord et al., J. Vac. Sci. Technol. B 4(1), 86-88 (1986).
McCord et al., J. Vac. Sci. Technol. B 6 (1), 293-296 (1988).
Research Disclosure 28130, Sep. 1987.
Schneir et al., J. Appl. Phys. 63, 717-721 (1988).
Schneir et al., Langmuir, 3, 1025-1027 (1987).
McCord et al., J. Vac. Sci. Technol. B 6 1877-1880 (1988).
Emch et al., J. Appl. Phys., 65, 79-84 (1989).
Staufer et al., J. Vac. Sci. Technol. A6, 537-539 (1988).
Ringger et al., Appl. Phys. Lett. 46, 832-834 (1985).
Van Loenen et al., Appl. Phys. Lett. 55, (13), 1312-1413, Sep. 25, 1989.
Jaklevic et al., Physical Review Letters, 60, 120-123 (1988).
Garfunkel et al., Science, 246, 99-100, Oct. 6, 1989.
Becker et al., Nature, 325, 419-421 (1987).

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