Alignment technique for anisotropicly conductive crystals utiliz

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k


Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0


264 24, 505727, C01F 1102, C01G 302, H01B 106, H01L 3924




A method of processing polycrystalline material to achieve at least uniaxial crystal alignment utilizing the anisotropy of conductivity of the crystalline material. The polycrystalline material is provided in a fluid suspension or other malleable form. A non-static magnetic field is applied to the crystalline material. Eddy currents induced in the individual crystals as a result of the non-static magnetic field generate a magnetic moment in the individual crystals which aligns itself and thus the individual crystals parallel to the applied non-static magnetic field, thus producing in-plane alignment of the crystals. Further processing including multi-axis crystal alignment is also disclosed utilizing the same procedure.

patent: 4288398 (1981-09-01), Lemelson
patent: 4536230 (1985-08-01), Landa et al.
patent: 4614619 (1986-09-01), Shannon
patent: 4708764 (1987-11-01), Boden et al.
patent: 4765055 (1988-08-01), Ozaki et al.
patent: 4775576 (1988-10-01), Bouchand et al.
patent: 4778635 (1988-10-01), Hechtman
patent: 4798765 (1989-01-01), Ishizaka et al.
patent: 4802931 (1989-02-01), Croat
patent: 4806176 (1989-02-01), Harase et al.
patent: 4818500 (1989-04-01), Boden et al.
patent: 4842704 (1989-06-01), Collins et al.
patent: 4842708 (1989-06-01), Kadokura et al.
patent: 4853660 (1989-08-01), Schloemann
patent: 4857415 (1989-08-01), Tustison et al.
patent: 4859410 (1989-08-01), Brewer et al.
patent: 4939121 (1990-07-01), Rybka
patent: 5079225 (1992-01-01), Holloway
patent: 5114905 (1992-05-01), Giessen
"Critical Current Enhancement in Field-Oriented YBa.sub.2 Cu.sub.3 ", K. Chen et al., Appl. Phys. Lett., 55(3), Jul. 17, 1989, pp. 289-291.
Ba.sub.2 YCu.sub.3 Crystal Surface Layers Orthorhombic Splitting, Dislocations and Chemical Etching, D. J. Werder et al., Physica C 160, (1989), 411-416.


Say what you really think

Search for the USA inventors and patents. Rate them and share your experience with other people.


Alignment technique for anisotropicly conductive crystals utiliz does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Alignment technique for anisotropicly conductive crystals utiliz, we encourage you to share that experience with our community. Your opinion is very important and Alignment technique for anisotropicly conductive crystals utiliz will most certainly appreciate the feedback.

Rate now


Profile ID: LFUS-PAI-O-1136409

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.