A SOI substrate fabricating method

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148DIG12, 437 86, 437974, 1566321, H01L 2176

Patent

active

057054215

ABSTRACT:
A SOI substrate fabricating method comprises the steps of: making a first etch-stop layer on a silicon substrate; polishing the surface of the first etch-stop layer; making a silicon buffer layer on the polished surface of the first etch-stop layer; making a silicon layer on the silicon buffer layer; making an insulating layer on the silicon layer; bonding one of major surfaces of a support substrate onto the insulating layer; and removing the silicon substrate, the first etch-stop layer and the silicon buffer layer and maintaining the insulating layer and the silicon layer on the one surface of the support substrate. Another SOI substrate fabricating method comprising the steps of: making a first etch-stop layer on a silicon substrate; polishing one surface of the first etch-stop layer; making a silicon buffer layer on the polished surface of the first etch-stop layer; making a compound semiconductor layer comprising silicon and at least one of germanium and carbon on the silicon buffer layer; making an insulating layer on the compound semiconductor layer; bonding one of major surfaces of a support substrate onto the insulating layer; and removing the silicon substrate, the first etch-stop layer and the silicon buffer layer and maintaining the insulating layer and the compound semiconductor layer on the one surface of the support substrate.

REFERENCES:
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5310451 (1994-05-01), Tejwani et al.
patent: 5344524 (1994-09-01), Sharma et al.
Maszara, W.P. et al, "Bonding of Silicon Wafers for Silicon-on-Insulator", J. Appl. Phys. 64(10), Nov. 1988, pp. 4943-4950.
Mitani, K., "Wafer Bonding . . . A Review", J. Elect. Mater., Jul. 1992, vol. 21, No. 7 pp. 669-676.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

A SOI substrate fabricating method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A SOI substrate fabricating method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A SOI substrate fabricating method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2328703

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.