Vertical MESFET with air spaced gate electrode

Details Vertical MESFET with air spaced gate electrode Vertical MESFET with air spaced gate electrode

1984-09-20

1986-02-11

Larkins, William D.

357 55, 357 56, 357 68, 357 69, 357 41, H01L 2980, H01L 2908, H01L 2956

Patent

active

045701741

ABSTRACT:
A high power high frequency field effect transistor is achieved with a vertical structure of gallium arsenide including a semi-insulating substrate, a conductive layer over the substrate, a narrow-central post having small metal gate electrodes on each side, metal drain electrodes on the conductive layer spaced from the central post and a metal source electrode supported on the central post. A deep channel around the post separates the metal drains, gates and source. Increased power is obtained from a cellular unit including two parallel source stripes, four gates and three drains. The drains are connected together by the conductive layer and a drain pad at one end, and the gates are connected at the other end by a gate pad on an outer region of the substrate. The gate connections to the pad are isolated from the conductive layer by a bridge over a space etched in the lower layer. A method for fabrication of this structure is also provided.

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Hochberg et al., "Fabrication of MOS Devices with Closer Source-Drain Spag" IBM Tech. Discl. Bull., vol. 10, No. 5, Oct., 1967, pp. 653-654.
Chemical Abstracts, vol. 96, No. 16, 76-Electric Phenomena, p. 801, 134391u (refers to NTIS order No. Pat-Appl.-6-295191 published 1-15-82).

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