Thin film transistors

Details Thin film transistors Thin film transistors

1982-12-13

1984-07-17

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 357 23, 357 4, H01L 4902, H01L 2138, H01L 21425, H01L 2922

Patent

active

044597398

ABSTRACT:
A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and DC stability is much improved.

REFERENCES:
patent: 3289054 (1966-11-01), Haering et al.
patent: 3405331 (1968-10-01), Skalski et al.
patent: 3419766 (1968-12-01), Ono
patent: 4332075 (1982-06-01), Ota et al.

Affiliated with

Also associated with

Rating

Thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1485017