Strain-inducing semiconductor regions

Details Strain-inducing semiconductor regions Strain-inducing semiconductor regions

2006-06-09

2010-11-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S066000, C257S192000, C257SE21415, C257SE29306, C438S102000, C438S257000

Reexamination Certificate

active

07825400

ABSTRACT:
A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate.

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patent: 2006/0093010 (2006-05-01), Sekiya et al.

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