Semiconductor having low concentration of carbon

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

252 623R, 252 623E, 2525011, 257 53, 257 55, 257 56, 257458, 257 65, H01L 310376, H01L 31075

Patent

active

060282649

ABSTRACT:
Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4.times.10.sup.18 atoms/cm.sup.3.

REFERENCES:
patent: 2882243 (1959-04-01), Milton
patent: 2971607 (1961-02-01), Caswell
patent: 3155621 (1964-11-01), Cowlard
patent: 3462422 (1969-08-01), Deal
patent: 3492175 (1970-01-01), Conrad et al.
patent: 3785122 (1974-01-01), Yatsurugi et al.
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 3982912 (1976-09-01), Yatsurugi et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4109271 (1978-08-01), Pankove
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4239554 (1980-12-01), Yamazaki
patent: 4409805 (1983-10-01), Wang
patent: 4418132 (1983-11-01), Yamazaki
patent: 4425143 (1984-01-01), Nishizawa et al.
patent: 4459163 (1984-07-01), MacDiarmid et al.
patent: 4460670 (1984-07-01), Ogawa et al.
patent: 4469527 (1984-09-01), Sugano et al.
patent: 4471042 (1984-09-01), Komatsu et al.
patent: 4485146 (1984-11-01), Mizuhashi
patent: 4490208 (1984-12-01), Tanaka et al.
patent: 4520380 (1985-05-01), Ovshinsky et al.
patent: 4549889 (1985-10-01), Yamazaki
patent: 4581476 (1986-04-01), Yamazaki
patent: 4582395 (1986-04-01), Morozumi
patent: 4591892 (1986-05-01), Yamazaki
patent: 4681984 (1987-07-01), Moeller
patent: 4710786 (1987-12-01), Ovshinsky et al.
patent: 4742012 (1988-05-01), Matsumura et al.
patent: 4758527 (1988-07-01), Yamazaki
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4843451 (1989-06-01), Watanabe et al.
patent: 4888305 (1989-12-01), Yamazaki et al.
patent: 4889782 (1989-12-01), Yamazaki
patent: 4889783 (1989-12-01), Yamazaki
patent: 5043772 (1991-08-01), Yamazaki
patent: 5077223 (1991-12-01), Yamazaki
patent: 5294555 (1994-03-01), Mano et al.
patent: 5315132 (1994-05-01), Yamazaki
patent: 5349204 (1994-09-01), Yamazaki
patent: 5391893 (1995-02-01), Yamazaki
patent: 5521400 (1996-05-01), Yamazaki
patent: 5543636 (1996-08-01), Yamazaki
Ohrishi et al., The annual meeting of applied physics in Japan (1980) 3p-T-12.
Sakai et al., The 28th annual meeting of Japan Society of Appl. Phys. (Spring 1981) 29p-T-2.
Ishiwata et al., The 28th annual meeting of Japan, Society of Appl. Phys. (Spring 1981) 1a-S-9.
Moller et al., "Low level baron doping and tight induced effects in amorphous silicon," 16th IEEE Photovoltaic Specialists Conference (1982), pp. 1376-1380, published Jan. 1993.
Amorphous Semiconductor, Technologies and Devices, 1982, Editor Y. Hamakawa, et al., pp. 194-198 North Holland Publishing Corporation [QC 611.8 A5J3].
C. Magee et al, "Investigations of the Hydrogen and Impurity Contents of Amorphous Silicon by Secondary Ion Mass Spetrometry", Solar Cells, vol. 2 (1980) 365-376.
Matsumura, Japanese Journal of Applied Physics, (Invited) Amorphous Silicon Transistors and Integrated Circuits, 1983, vol. 22, Supplement 22-1, pp. 437-491.
P.G. LeComber, Electronics Letters, vol. 15, No. 6 Amorphous-Silicon Field-Effect Device and Possible Application, Mar. 15, 1979, pp. 179-18 .
K. Roy et al, Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 897-901.
Affidavit of Chuang Chuang Tsai.
C.C. Tsai, Tenth International Conference on Amorphous and Liquid Semiconductors, Glow Discharge a-Si:H Produced in UHV System, Tokyo, Aug. 22-26, 1983 (Abstract).
C.C. Tsai, Journal of Non-Crystalline Solids, Amorphous Si Prepared in a UHV Plasma Deposition System, vol. 59-60 (1983), published Jan. 16, 1984, pp. 731-734.
T.I. Kamins, IEEE Electron Device Letters, MOSFETs in Laser-Recrystallized Poly-Silicon on Quartz, Oct. 1980.
A.E. Delahoy et al., Conf. Record, 15th IEEE Photovoltare Specialists Conf. (1981), pp. 704-712.
Nikkei Electronics, Zenko Hirose, Dec. 20, 1982, p. 168 (English translation filed herewith).
Journal of Non-Crystalline Solids (vol. 68, 1984) Magee & Carlson, "Investigation of the Hydrogen and Impurity Contents of Amorphous Silicon by Secondary Ion Mass Spectrometry", Solar Cells, vol. 2, pp. 365-376 (1980).
M. Moller et al., Conference Record, 167th IEEE Photovoltaic Specialists Conference (Sep. 1982), pp. 1376-1380 "Low Level Boron Doping & Light-Induced Effects in Amorphous Silicon Pin Solar Cells".
Y. Hamakawa, Amorphous Semiconductor Technologies and Devices, pp. 194, 198 (1982).
Palz, W. et al., "Photovoltaic Solar Energy Conference", Proceedings of International Conference, held at Athens, Greece, Oct. 17-21, 1983, D. Reidel Publishing Company, 6 pages submitted including letter to publisher dated Mar. 10, 1999.
J. Pankove, Hydrogenated Amorphous Silicon, vol. 21 Part A., Semiconductors and Semimetals Series, Academic Press, 1984.
Expert Report of Morgan.
Expert Report of Stephen Smith.
Expert Report of Anthony Catalano.
Expert Report of Dr. John T. Davies.
Expert Report of Dr. Bruce E. Deal.
Expert Report of Stephen J. Fonash.
Expert Report of Arthur Jonath.
Initial Expert Report of Harry F. Manbeck, Jr.
First Supplemental Expert Report of Harry F. Manbeck, Jr.
Expert Report of Jan. E. A. Maurits.
Initial Expert Report of Bernard S. Meyerson.
Expert Report of Douglas Ruthven.
Expert Report of D. Warren Vidrine.
Expert Report of Christopher R. Wronski.
Second Declaration by Dr. Yamazaki.
Notice of Samsung's Motion for Summary Judgment Declaring U.S. application No. 5,543,636 Invalid For Failure To Enable.
Defendant's Motion for Summary Judgment Declaring U.S. application No. 5,543,636 Invalid For Failure to Enable.
Memorandum In Support Of Defendants' Motion For Summary Judgment Declaring U.S. application No. 5,543,636 Invalid For Failure to Enable.
Semiconductor Energy Laboratory, Co., Ltd.'s Memorandum In Opposition To Defendants' Motion For Summary Judgment Declaring U.S. application No. 5,543,636 Invalid For Failure To Enable.
Defendants' Reply In Support of Motion For Summary Judgment Declaring U.S. application No. 5,543,636 For Failure To Enable.
Declaration of Dr. Shunpei Yamazaki.
Memorandum In Support of Samsung's Motion For Summary Judgment Declaring U.S. application No. 5,543,636 Invalid As Obvious Under 35 U.S.C. 103.
Memorandum In Support Of Defendant's Motion For Summary Judgment Declaring U.S. application No. 5,543,636 Invalid For Failure To Disclose Best Mode.
Notice Of SEL's Motion For Summary Judgment Dismissing Samsung's Inequitable Conduct Defense To The '636 Patent.
Motion For Summary Judgment Dismissing Samsung's Inequitable Conduct Defense To The '636 Patent.
Memorandum Of Law In Support Of SEL's Motion For Summary Judgment Dismissing Samsung's Inequitable Conduct Defense To The '636 Patent.
Declaration Of Robert Cote In Support Of SEL's Motion For Summary Judgment Dismissing Samsung's Inequitable Conduct Defense To The '636 Patent.
Declaration of Gerald J. Ferguson, Jr.
Second Declaration of Gerald J. Ferguson, Jr.
Rebuttal Report of Gerald Lucovsky.
Rebuttal to Catalano Report by Dr. Magee.
Japanese Patent Document 57-13777 with English translation published Jan. 23, 1982, Japan.
Supplemental Expert Report of Catalano.
Szydlo et al., "High Current Post-Hydrogenated Chemical Vapor Deposited Amorphous Silicon PIN Diodes", pp. 988-990, Jun. 1, 1992 (cited in Supplemental Expert Report of Catalano).
Kamei et al., "Deposition and Extensive Light Soaking of Highly Pure Hydrogenated Amorphous Silicon", pp. 2380-2382, Apr. 22, 1996 (cited in Supplemental Expert Report of Catalano).
First Amended Expert Report of Stephen J. Fonash.
First Supplemental Expert Report of Fonash.
Rebuttal Expert Report of Fonash.
Revised Expert Report of Ruthven.
Revised Expert Report of Maurits.
Second Supplemental Expert Report of Morgan.
First Supplemental Expert Report of Smith.
First Amended and Supplemental Expert Report of Deal.
Memorandum Opinion Published Apr. 15, 1998 of Judge T.S. Ellis, III in C.A. No. 96-1460-A attached to IDS as Exhibit C.
Applicant SEL's Motion for Reconsideration, with exhibits A-N.
Documents discussed in Judge Ellis' opinion--Japanese Patent Document 56-135968 (Canon '968) attached to IDS as Exhibit D.
Documents discussed in Judge Ellis' opinion--Partial translation of Japanese Patent Document 56-135968 (Canon '968) attached to IDS as Exhibit E.
Docume

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor having low concentration of carbon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor having low concentration of carbon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor having low concentration of carbon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-522168

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.