Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-10-23

2011-12-13

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S149000, C438S270000, C438S259000, C438S589000, C257SE21540, C257SE21585

Reexamination Certificate

active

08076203

ABSTRACT:
A polysilicon film is formed all over a surface of a semiconductor substrate, then is subject to a CMP process through a mask pattern as a stopper. Then, a metal film is formed all over the resulting surface, and is allowed at least a part of the polysilicon film and at least a part of the metal film to react with each other to silicidize the metal. This forms the gate electrode.

REFERENCES:
patent: 5635415 (1997-06-01), Hong
patent: 6060740 (2000-05-01), Shimizu et al.
patent: 6518618 (2003-02-01), Fazio et al.
patent: 7358142 (2008-04-01), Kang et al.
patent: 7436019 (2008-10-01), Lutze et al.
patent: 7833867 (2010-11-01), Fujimoto
patent: 2006/0115936 (2006-06-01), Oyu et al.
patent: 2006/0202257 (2006-09-01), Kutsukake et al.
patent: 2008/0099858 (2008-05-01), Kawakita
patent: 64-008670 (1989-01-01), None
patent: 08-227935 (1996-09-01), None
patent: 2000-077604 (2000-03-01), None
patent: 2000-277604 (2000-10-01), None
patent: 2001-102439 (2001-04-01), None
patent: 2001-298194 (2001-10-01), None
patent: 2002-118255 (2002-04-01), None
patent: 2002-190536 (2002-07-01), None
patent: 2005-229107 (2005-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4293940