Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

1996-12-27

1998-05-19

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438259, 438270, 438430, 438589, H01L 21336

Patent

active

057535540

ABSTRACT:
A semiconductor device and method of forming the same are disclosed for eliminating the surface topology can be properly eliminated. A selected regions of semiconductor substrate for forming a gate and field oxide layer are etched to form trenches, a field oxide layer is formed in the inner part of trench which is corresponding to a selected region of field oxide layer and then a gate oxide film on surface of the semiconductor substrate and the inner part of the trenches. A gate is filled with a gate material in the trenches to a gate, junction regions are then formed in the semiconductor substrate which corresponds to either side of the gate.

REFERENCES:
patent: 4536782 (1985-08-01), Brown
patent: 4830975 (1989-05-01), Bovaird et al.
patent: 5093273 (1992-03-01), Okumura
patent: 5316959 (1994-05-01), Kwan et al.

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