Process for the purification of granular silicon dioxide

Details Process for the purification of granular silicon dioxide Process for the purification of granular silicon dioxide

1989-09-21

1990-09-11

Straub, Gary P.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

423335, 423340, C25F 500, C01B 3312

Patent

active

049560590

ABSTRACT:
Granular silicon dioxide is placed in a treatment chamber which is heated to a temperature ranging from 700.degree. to 1300.degree. C. The chamber is then rotated for a prescribed period of time to mix the grains while a gaseous atmosphere of chlorine and/or hydrogen chloride is passed through the treatment chamber. The mixing period is followed by a resting period which is at least ten times longer than the mixing time. During the resting period the grains are exposed to a constant electric field having a strength of 600 to 1350 V/cm applied across the chamber. The foregoing cycle is repeated several times. For working the process a device is used which includes a quartz glass rotary tube into which hollow silicon carbide electrodes extend.

REFERENCES:
patent: 4300989 (1981-11-01), Chung
patent: 4492587 (1985-01-01), Fletcher

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