Plasma emission triggered protection device for protecting again

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257431, 257 48, H01L 2362

Patent

active

059947420

ABSTRACT:
One embodiment of the instant invention is a charge-induced damage protection device (100 or 500) for protecting a semiconductor device (200) which is formed on a common substrate with the protection device, the protection device comprising: a region in the substrate; and wherein the region is accessible to electromagnetic energy during processing in which charges may collect on conductive material such that the protective device turns on at a lower voltage due to introduction of the electromagnetic energy to the region so as to protect the semiconductor device from the charge-induced damage. Preferably, the protection device is selected from the group consisting of: a diode, a thyristor, a bidirectional thyristor, a bipolar transistor, and a polymer that becomes more conductive upon being illuminated by electromagnetic energy. The protection device of this embodiment may include a layer situated above the substrate, the layer having an opening (102) above the active region such that the electromagnetic energy passes through the opening to the active region. In another embodiment, the protection device would include a layer situated above the substrate, the electromagnetic energy passing between the substrate and the layer so as to illuminate the active region.

REFERENCES:
patent: 4543597 (1985-09-01), Shibata
patent: 4941028 (1990-07-01), Chen et al.

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