Plasma damage reduction device for sub-half micron technology

Details Plasma damage reduction device for sub-half micron technology Plasma damage reduction device for sub-half micron technology

1996-04-12

1997-07-22

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257537, 257786, H01L 2358

Patent

active

056506511

ABSTRACT:
An improved transistor structure. The novel transistor structure includes a substrate, at least one source disposed on the substrate; at least one drain disposed on the substrate; and at least one gate disposed on the substrate between the source and the drain. The gate has a layer of at least partially conductive material of area A.sub.g. The gate is connected to a pad provided by a single or multiple layer of conductive material of area A.sub.p. In accordance with the present teachings, a thin gate oxide capacitor of area A.sub.c is connected to the gate pad via single or multiple layer of conductive material. The area of the third layer is selected such that the ratio R of the area of the second layer A.sub.p to the area of the first layer A.sub.g plus the area of the third layer A.sub.c is equal to a predetermined number. The third layer serves to reduce the antenna effect created by the pad and the multiple layers of conductive material between the gate contact and the pad in accordance with the antenna ratio R.

REFERENCES:
patent: 4631571 (1986-12-01), Tsubokura
patent: 4725980 (1988-02-01), Wakimoto et al.
patent: 5170235 (1992-12-01), Tanino
patent: 5278105 (1994-01-01), Eden et al.
patent: 5350710 (1994-09-01), Hong et al.
patent: 5394013 (1995-02-01), Oku et al.
Patent Abstracts of Japan vol. 16 No. 259, Jun. 11, 1992, Kokai # 04-057343 .

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